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{ "products": [ { "_id": "5c6671c7a92b8d0001c55e8a", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "RHRG75120 Hyperfast Diode", "description": "RHRG75120 Hyperfast DiodeThe RHRG75120 is a hyperfast diode with soft recovery characteristics (trr < 85ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.\n \n\nRHRG75120 IC Specifications:\nManufacturer ON Semiconductor\nProduct Category Diodes - General Purpose, Power, Switching\nMounting Style Through Hole\nPackage/Case TO-247\nPeak Reverse Voltage 1200 V\nConfiguration Single\nRecovery Time 100 ns\nVf - Forward Voltage 3.2 V\nIr - Reverse Current 250 uA\nMaximum Operating Temperature + 175 C\nSeries RHRG75120", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 88, "imageuri": "https://productimages.withfloats.com/actual/5c6671c7ccfc3200015dfe6a.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c6671c7ccfc3200015dfe6a.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T08:01:11.22Z", "updatedon": "2019-02-15T08:01:11.22Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/rhrg75120-hyperfast-diode/88", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "RHRG75120 Hyperfast Diode", "tags": [ "RHRG75120 Hyperfast Diode" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c6671988c5a4a00013cc9b2", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "RHRG30120 Hyper-fast Diode", "description": "The RHRG30120 is a hyper-fast diode with soft recovery characteristics. It has the half recovery time of ultra-fast diodes and is silicon nitride passivated ion implanted epitaxial planar construction.RHRG30120 diodedevice is intended to be used asfreewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyper-fast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.\n \n\nFeatures of RHRG30120 Hyper-fast Diode:\n\nHyper-fast recovery Trr = 85ns (@IF= 30A)\nMax Forward Voltage, VF = 3.2V (@ TC = 25 DegreeC)\nAvalanche Energy Rated\nRoHS compliant\nPackage / Case TO-247\nIf - Forward Current 30 A\nConfiguration Single", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 87, "imageuri": "https://productimages.withfloats.com/actual/5c66719ac42959000153a1f7.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c66719ac42959000153a1f7.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T08:00:24.911Z", "updatedon": "2019-02-15T08:00:24.911Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM//rhrg30120-hyper-fast-diode/87", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "RHRG30120 Hyper-fast Diode", "tags": [ "RHRG30120 Hyper-fast Diode" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c667c6464212b0001323ced", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "IXBH16N170A IXYS", "description": "IXYS \nIXBH Series Single 1700 V 16 A 15 ns t(on) Bipolar Mos Transistor - TO-247AD\n\nMfr Part#: IXBH16N170A\nMounting Method: Through Hole\nPackage Style: TO-247AD\nPackaging: TUBE\nStd Packaging Qty: 30\n\n\nIXYS is a state of the art leader in MOSFET technology through the IXBH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.\n\nThe ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.\n\nBy delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.\n\n \n\nPerfect for both commercial and industrial applications, the IXBH16N170A (this part is lead free) has the capacity to operate at 1700 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 10 Ohms). Avalanche rated, the IXBH16N170A is able to reduce power dissipation levels to approximately 150 watts. The IXBH16N170A provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 122, "imageuri": "https://productimages.withfloats.com/actual/5c667c648cd1110001de4347.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c667c648cd1110001de4347.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T08:46:28.18Z", "updatedon": "2019-02-15T08:46:28.18Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/ixbh16n170a-ixys/122", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "IXBH16N170A IXYS", "tags": [ "IXBH16N170A IXYS" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c667c1627e87f0001d2f8e7", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "HGTG11N120CND ON SEMICONDUCTOR", "description": "Leading Wholesale Trader of HGTG11N120CND ON SEMICONDUCTOR, IXGH32N170 IXYS IGBT, IXBH16N170A IXYS, IRG4PC40UDPBF, IXGX120N60A3 IXYS and IXXH100N60B3 IXYS IGBT from Mumbai.\n\nON SEMICONDUCTOR \nHGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247\n\nMfr Part#: HGTG11N120CND\nMounting Method: Flange Mount\nPackage Style: TO-247-3\nPackaging: TUBE\nStd Packaging Qty: 450\n\n\nThe HGTG11N120CND is a N on- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.\n\nThis device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.\n\nFeatures:\n\n43 A, 1200 V, T C = 25 oC\n1200 V Switching SOA Capability\nTypical Fall Time. . . . . . . . . . . . . . . . .340 ns at T J = 150 o CShort Circuit Rating\nLow Conduction Loss\nThermal Impedance\nSPICE Model", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 120, "imageuri": "https://productimages.withfloats.com/actual/5c667c1746f19500011ce550.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c667c1746f19500011ce550.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T08:45:10.323Z", "updatedon": "2019-02-15T08:45:10.323Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/hgtg11n120cnd-on-semiconductor/120", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "HGTG11N120CND ON SEMICONDUCTOR", "tags": [ "HGTG11N120CND ON SEMICONDUCTOR" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c66711fa92b8d0001c55e7a", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "IRS2110 IC", "description": "IRS2110 MOSFET and IGBT Driver ICIRS2110 is high voltage, high speedpower MOSFET and IGBT driverswith independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive anN-channel power MOSFET or IGBTin the high-side configuration which operates up to 500 V or 600 V.\n\nFeatures of IRS2110 High and Low Side Driver IC:\nFloating channel designed for bootstrap operation\nFully operational to +500 V or +600 V\nTolerant to negative transient voltage, dV/dt immune\nGate drive supply range from 10 V to 20 V\nUndervoltage lockout for both channels\n3.3 V logic compatible\nSeparate logic supply range from 3.3 V to 20 V\nLogic and power ground +- 5V offset\nCMOS Schmitt-triggered inputs with pull-down\nCycle by cycle edge-triggered shutdown logic\nMatched propagation delay for both channels\nOutputs in phase with inputs\nRoHS compliant", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 84, "imageuri": "https://productimages.withfloats.com/actual/5c6671230344f60001c16718.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c6671230344f60001c16718.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T07:58:23.386Z", "updatedon": "2019-02-15T07:58:23.386Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM//irs2110-ic/84", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "IRS2110 IC", "tags": [ "IRS2110 IC" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c666fdca92b8d0001c55e6f", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "Tk17a80w Mosfet Toshiba", "description": "Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.\n\nFeatures:\nLow drain-source on-resistance\nEasy to control Gate switching\nEnhancement mode: Vth = 2.7 to 3.7V\n30% reduction in RDSon*A compared to previous generation\nImproved figure of merit (FOM) compared to DTMOS III generation\nReduction in Coss\nApplication of latest process technology: single epitaxial process\nWide range of on-resistances and packaging options\n45% reduction of Qgd (gate drain charge) at X-Series\n\nApplications:\nSwitched Mode Power Supply (SMPS)\nLighting\nPower Factor Control (PFC)\nIndustrial Applications (including UPS)\n", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 77, "imageuri": "https://productimages.withfloats.com/actual/5c666fe0d1d7ba0001a82234.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c666fe0d1d7ba0001a82234.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T07:53:00.597Z", "updatedon": "2019-02-15T07:53:00.597Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/tk17a80w-mosfet-toshiba/77", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "Tk17a80w Mosfet Toshiba", "tags": [ "Tk17a80w Mosfet Toshiba" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c666d552dd67000011806e1", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "TNY268PN Power Integrations", "description": "Description TinySwitch™-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a bias winding and associated circuitry. In addition, the TinySwitch-II devices incorporate auto-restart, line undervoltage sense, and frequency jittering. An innovative design minimizes audio frequency components in the simple ON/OFF control scheme to practically eliminate audible noise with standard taped/varnished transformer construction. PI-2684-061815 Wide-Range High-Voltage DC Input D S EN/UV BP + - + - DC Output TinySwitch-II Optional UV Resistor The fully integrated auto-restart circuit safely limits output power during fault conditions such as output short circuit or open loop, reducing component count and secondary feedback circuitry cost. An optional line sense resistor externally programs a line undervoltage threshold, which eliminates power down glitches caused by the slow discharge of input storage capacitors present in applications such as standby supplies. The operating frequency of 132 kHz is jittered to significantly reduce both the quasi-peak and average EMI, minimizing filtering cost.", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 69, "imageuri": "https://productimages.withfloats.com/actual/5c666d59679ff600016b8bc4.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c666d59679ff600016b8bc4.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T07:42:13.515Z", "updatedon": "2019-02-15T07:42:13.515Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/tny268pn-power-integrations/69", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "TNY268PN Power Integrations", "tags": [ "TNY268PN Power Integrations" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c66838e2dd67000011807cf", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "2N2222 Amplifier Transistor(TO-92)", "description": "2N2222 Amplifier Transistor2N2222 is NPN BJTnormally used in low power amplifiers and also for switching application. 2n2222 is used as asmall signal transistorand used as a general purpose transistor and is very popular. This is in TO-92 package form.\n\nFeatures:\nNPN Silicon Planar Switching Transistors.\nSwitching and Linear application DC and VHF Amplifier applications.\nRating Symbol Value Unit\nCollector-Base Voltage VCBO 75 Vdc\nEmitter-Base Voltage VEBO 6.0 Vdc\nCollector Current - Continuous IC 600 mAdc\nTotal Device Dissipation(PD) @ TA= 25 DegreeC 625 mW\nPDDerate above 25 DegreeC 5.0 mW/ DegreeC\nTotal Device Dissipation(PD)@ TC= 25 DegreeC 1.5 Watts\nPDDerate above 25 DegreeC 12 mW/ DegreeC\nJA 200 DegreeC/W\nJC 83.3 DegreeC/W", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 147, "imageuri": "https://productimages.withfloats.com/actual/5c6683967d9ad00001b9b215.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c6683967d9ad00001b9b215.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T09:17:02.108Z", "updatedon": "2019-02-15T09:17:02.108Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/2n2222-amplifier-transistor-to-92-/147", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "2N2222 Amplifier Transistor(TO-92)", "tags": [ "2N2222 Amplifier Transistor(TO-92)" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false }, { "_id": "5c66831ca3b7df0001c6ef7d", "fptag": "SURAJELECTRONIC", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "C945 NPN Transistor", "description": "C945 NPN Transistor A C945 transistor is a type of NPN bipolar junction transistor. Circuits where a low-current, high-speed transistor is required will employ a transistor such as C945 transistor. Circuits such as a small-signal amplifier or a high-speed switching circuit might employ one or more C945 transistors. \n", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": null, "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 144, "imageuri": "https://productimages.withfloats.com/actual/5c66831cae1bc700015971d8.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/5c66831cae1bc700015971d8.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2019-02-15T09:15:08.082Z", "updatedon": "2019-02-15T09:15:08.082Z", "buyonlinelink": null, "producturl": "http://WWW.SURAJELECTRONICS.COM/components/c945-npn-transistor/144", "availableunits": -1.0, "iscodavailable": true, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "C945 NPN Transistor", "tags": [ "C945 NPN Transistor" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.0, "isnotforsale": false } ], "hasmoreitems": false, "isapirequest": false, "totalresults": 27, "query": null, "floatingpoint": null }