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IRS2110 MOSFET and IGBT Driver ICIRS2110 is high voltage, high speedpower MOSFET and IGBT driverswith independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive anN-channel power MOSFET or IGBTin the high-side configuration which operates up to 500 V or 600 V.Features of IRS2110 High and Low Side Driver IC:Floating channel designed for bootstrap operationFully operational to +500 V or +600 VTolerant to negative transient voltage, dV/dt immuneGate drive supply range from 10 V to 20 VUndervoltage lockout for both channels3.3 V logic compatibleSeparate logic supply range from 3.3 V to 20 VLogic and power ground +- 5V offsetCMOS Schmitt-triggered inputs with pull-downCycle by cycle edge-triggered shutdown logicMatched propagation delay for both channelsOutputs in phase with inputsRoHS compliant
IRS2110 IC
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2P4M 2A Plastic Molded ThyristorThe2P4Mis a p-gate, all diffused plastic molded typeSCRwith average On Time current of 2Amps with rated voltage up to 600V. It can be used a general purposethyristorin variety of power control applications.Features of 2P4M:Less Holding Current distribution provides free application design.Easy Installation by its miniature size and thin electrode leads.Low Cost.Applications of 2P4M:Electric BlanketElectronic jarvarious Temperature ControlElectric sewing machineLight Display equipmentLamp DimmerBattery Charger
2P4M 2A Plastic Molded Thyristor
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Features of 4N35 Optocoupler:Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Photo-transistorHigh Direct-Current Transfer RatioHigh-Voltage Electrical Isolation 1.5-kV, 2.5-kV, or 3.55-kV RatingHigh-Speed Switching tr = 7 s, tf = 7 s TypicalInput-to-output root-mean-square voltage (8-ms half sine wave)4N35= 2.5 kVCollector-emitter voltage=30 VEmitter-base voltage=7 VInput-diode reverse voltage=6 VTypical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers
4N35 Optocoupler
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MCT2E OptoisolatorMCT2E optoisolator consist of a gallium arsenide infrared emitting diode driving a silicon photo-transistor in a 6-pin dual in-line package.Features of MCT2E: Operating Temperature TOPR-55 to +100 DegreeCLead Solder Temperature TSOL260 for 10 sec DegreeCCollector-Emitter Voltage VCEO30 VDetector Power Dissipation @ TA= 25 DegreeC 150 mWApplications of MCT2E:Power supply regulatorsDigital logic inputsMicroprocessor inputs
MCT2E Optoisolator
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The6N137is single channel 10 MBd opto-couplers utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transistor output, providing less leakage compared to an open collector Schottky clamped transistor output. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The use of a 0.1 F bypass capacitor connected between pin 5 and 8 is recommended. Features of 6N137 High-Speed Opto-coupler:Choice of CMR performance of 15 kV/s, 5 kV/s, and 1000 V/sHigh speed 10 MBd typical+5 V CMOS compatibilityPure tin leadsGuaranteed AC and DC performance overMeets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S) requirements
6N137 High Speed Optocoupler
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6N139 High Speed Opto-coupleris High common mode transient immunity and very high current ratio together with 5300 VRMSinsulation are achieved by coupling and LED with an integrated high gain photo detector in an eight pin dual-in-line package. Separate pins for the photo diode and output stage enable TTL compatible saturation voltages with high speed operation. Access to the base terminal allows adjustment to the gain bandwidth. The 6N138 is ideal for TTL applications since the 300 % minimum current transfer ratio with an LED current of 1.6 mA enables operation with one unit load-in and one unit load-out with a 2.2 kO pull-up resistor. The6N139 optocoupleris best suited forlow powerlogic applications involving CMOS and low power TTL. A 400 % current transfer ratio with only 0.5 mA of LED current is guaranteed from 0 DegreeC to 70 DegreeC.
6N139 High Speed Optocoupler
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W78E052DDG is 8051 compatible 8-bit controller from Nuvoton with 8K programmable flash memory in 40 Pin DIP package. Wide operating voltage 2.4 - 5.5V, at 12 clock default per machine cycle it can achieve maximum 40 MHz. Peripheral includes Timer, counter, interrupt, watchdog timer and 4 ports and default configuration fully compatible with 80C52. This chip has separate dedicated 2K boot-loader memory, which makes this chip robust and very stable compare to other in this category. The chances of boot-loader erased or corrupted by user program or error are negligible. It supports ISP program downloading from PC using RX-TX lines only. Software for downloading is provided by the company free of cost.
Nuvoton Microcontroller
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Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.Features:Low drain-source on-resistanceEasy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V30% reduction in RDSon*A compared to previous generationImproved figure of merit (FOM) compared to DTMOS III generationReduction in CossApplication of latest process technology: single epitaxial processWide range of on-resistances and packaging options45% reduction of Qgd (gate drain charge) at X-SeriesApplications:Switched Mode Power Supply (SMPS)LightingPower Factor Control (PFC)Industrial Applications (including UPS)
Tk17a80w Mosfet Toshiba
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LED Driver IC BP3319MBBright Power Semiconductor -Led Driver Ic:BP9911ABP9911BBP9911CBBP9911CCBP9912ABP9912BBP9912CBBP9912CBP9918ABP9918BBP9918CBBP9918CBP9916ABP9916BBP9916CBBP9916CBP9916DBP9921CBP9926CBP9926DBP9736BBP2831ABP2831AJBP2831KBP2832ABP2832AJBP2832KBP9833ABP2833ABP2833KBP2836ABP9833DBP2833DBP2836DBP2857DBP2865EBP2839ABP2333BP2335JBP2336JBP2338JBP2325AJBP2326AJBP2327AJBP2328AJBP2328DJBP2329AJBP5136HBP5131DCBP5131SCBP5131HCBP5151HCBP5152HCBP5158HBP9116BBP3122BBP3135BP3135DBP3163DBP9021ABP9022ABP3133ABP3122BP3125BP3126SBP3126BP3106BP3105BP3316DBP3315BP3316BP3319MBBP3211BP3212BP3216BP3216EBP3218BP3236CBP3238BP1360BP1361BP1808UR4205CUR3311BP5609BP5619BP3198BP2882BP2888BP2888ABP5912ABP5912BBP5910BP5911BP5901BP2838BP2838GBP2838HBP2871BP2872BP2318BP3318BP3516CBP3519BP2519BP2516FBP2513DBP3319BP3329
LED Driver IC BP3319MB
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Mosfet/Integrated Circuit (IC)SOT-23/SOT-23-3L EncapsulateSI2300 SI2301 SI2302 SI2303 SI2304SI2305 SI2306 SI2307 SI2308 SI2309SI2312 SI2315 SI2317 SI2323 2N7002SK3018 BSS138 BSS123 A03400 A03401 A03402 A03403 A03404 A03406 A03407 A03409A03410 A03413 A03415 A03420TO-92 SMD Plastic Package2N7000 1N45 1N50 1N60 1N80SOP-8 Encapsulate4401 4402 4406 4407 4410 4420 4435 4606 4614 48034812 4920 4953 9926 9435TO-252 eNCAPSULATE1N60 2N60 4N60 10N06 10P06
Mosfet/Integrated Circuit (IC)
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MOSFET Transistors - IRF Series:IRF150 38A 100V N-Channel Power MOSFETIRF250 30A 200V N-Channel Power MOSFETIRF350 14A 400V N-Channel Power MOSFETIRF510 5.6A 100V N-Channel Power MOSFETIRF520 10A 100V N-Channel Power MOSFETIRF530 14A 100V N-Channel Power MOSFETIRF540 30A 100V N-Channel Power MOSFETIRF610 3.3A 200V N-Channel Power MOSFETIRF620 6A 200V N-Channel Power MOSFETIRF630 9A 200V N-Channel Power MOSFETIRF634 8.1A 250V N-Channel Power MOSFETIRF640 18A 200V N-Channel Power MOSFETIRF644 14A 250V N-Channel Power MOSFETIRF720 3.3A 400V N-Channel Power MOSFETIRF730 5.5A 400V N-Channel Power MOSFETIRF740 10A 400V N-Channel Power MOSFETIRF820 2.5A 500V N-Channel Power MOSFETIRF830 4.5A 500V N-Channel Power MOSFETIRF840 8A 500V N-Channel Power MOSFETIRF1010N 85A 55V N-Channel Power MOSFETIRF1404 202A 40V N-Channel Power MOSFETIRF1405 169A 55V N-Channel Power MOSFETIRF3205 110A 55V N-Channel Power MOSFETIRF3315 27A 150V N-Channel Power MOSFETIRF3415 43A 150V N-Channel Power MOSFETIRF3710 57A 100V N-Channel Power MOSFETIRF4905 74A 55V P-Channel Power MOSFETIRF5210 40A 100V P-Channel Power MOSFETIRF5305 31A 55V P-Channel Power MOSFETIRF9520 6.8A 100V P-Channel Power MOSFETIRF9530 12A 100V P-Channel Power MOSFETIRF9531 12A 60V P-Channel Power MOSFETIRF9532 10A 100V P-Channel Power MOSFETIRF9533 10A 60V P-Channel Power MOSFETIRF9540 23A 100V P-Channel Power MOSFETIRF9610 1.8A 200V P-Channel Power MOSFETIRF9630 6.5A 200V P-Channel Power MOSFETIRF9640 11A 200V P-Channel Power MOSFETIRF9Z34N 19A 55V P-Channel Power MOSFETIRFBG30 3.1A 1000V N-Channel Power MOSFETIRFD014 1.7A 60V N-Channel Power MOSFETIRFD024 2.5A 60V N-Channel Power MOSFETIRFD110 1A 100V N-Channel Power MOSFETIRFD120 1.3A 100V N-Channel Power MOSFETIRFD9014 1.1A 60V P-Channel Power MOSFETIRFD9024 1.6A 60V P-Channel Power MOSFETIRFD9120 1A 100V P-Channel Power MOSFETIRFP140 33A 100V N-Channel Power MOSFETIRFP150 42A 100V N-Channel Power MOSFETIRFP240 20A 200V N-Channel Power MOSFETIRFP250 33A 200V N-Channel Power MOSFETIRFP254 23A 250V N-Channel Power MOSFETIRFP260 50A 200V N-Channel Power MOSFETIRFP350 16A 400V N-Channel Power MOSFETIRFP450 14A 500V N-Channel Power MOSFETIRFP460 20A 500V N-Channel Power MOSFETIRFP9240 12A 200V P-Channel Power MOSFETIRFZ14 10A 60V N-Channel Power MOSFETIRFZ24N 17A 55V N-Channel Power MOSFETIRFZ34 26A 55V N-Channel Power MOSFETIRFZ44 49A 55V N-Channel Power MOSFETIRFZ46 50A 50V N-Channel Power MOSFETIRFZ48 50A 60V N-Channel Power MOSFETIRL520 10A 100V N-Channel Power MOSFETIRL540 36A 100V N-Channel Power MOSFET
MOSFET Transistors - IRF Series
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NE556 Dual Bipolar TimersNE556 provides two independent timing circuits of the NA555, NE555, SA555, or SE555 type in each package. These circuits can be operated in the astable or monostable mode with external resistor-capacitor(RC) timing control. the basic timing provided by the RC time constant can be controlled actively by moduling the bias of the control-voltage input.Features of NE556:Low turn-off timeTiming from microseconds to hoursOperates in both astable and monostable modesAdjustable duty cycleTTL compatible
NE556 Dual Bipolar Timers
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potentiometer3296W TRIMMER POTENTIONMETERTRIMPOT3006P POTENTIOMETERPRESETHORIZONTAL PRESET16MM TONELCON PRESETELCONPERSET IN MUMBAIPRESET BUYERRMO65VERTICAL PRESETRMPPRESET TRADERELCON TONRMO65-10KP10KJWCO Electrolytic Capacitors 100uf/160vJWCO Electrolytic Capacitors 22uf/63v8way switchbox type switchDip switch10way switch4wayYageo Multilayer Ceramic Capacitors MLCCJWCO Electrolytic Capacitors 220uf/100vIRS2110 ICMJE13005 NPN Power TransistorKBL410 4A 1000 V single phase rectifier bridgeL7812 Voltage RegulatorMJE13009 NPN Power TransistorNuvoton MicrocontrollerES2J Fast / Ultrafast Power DiodeC945 NPN TransistorL7805 Voltage Regulators4.7uF 400V Keltron CapacitorMetallized Polyester Film CapacitorMetal Oxide Varistor (HEL)INDUCTORMJE2955 Power TransistorSchottky Rectifiers DiodesZener Diodes SOT-23Metallized Polypropylene Film Weidy Capacitor22pF Ceramic CapacitorLittelfuse Metal Oxide Varistors (Mov)BP3309 LED Driver ICHYDZ Piezo BuzzerRHRG75120 Hyperfast DiodeBR1010 Bridge 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IRS2110 MOSFET and IGBT Driver ICIRS2110 is high voltage, high speedpower MOSFET and IGBT driverswith independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive anN-channel power MOSFET or IGBTin the high-side configuration which operates up to 500 V or 600 V.Features of IRS2110 High and Low Side Driver IC:Floating channel designed for bootstrap operationFully operational to +500 V or +600 VTolerant to negative transient voltage, dV/dt immuneGate drive supply range from 10 V to 20 VUndervoltage lockout for both channels3.3 V logic compatibleSeparate logic supply range from 3.3 V to 20 VLogic and power ground +- 5V offsetCMOS Schmitt-triggered inputs with pull-downCycle by cycle edge-triggered shutdown logicMatched propagation delay for both channelsOutputs in phase with inputsRoHS compliant
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IRS2110 IC
2P4M 2A Plastic Molded ThyristorThe2P4Mis a p-gate, all diffused plastic molded typeSCRwith average On Time current of 2Amps with rated voltage up to 600V. It can be used a general purposethyristorin variety of power control applications.Features of 2P4M:Less Holding Current distribution provides free application design.Easy Installation by its miniature size and thin electrode leads.Low Cost.Applications of 2P4M:Electric BlanketElectronic jarvarious Temperature ControlElectric sewing machineLight Display equipmentLamp DimmerBattery Charger
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2P4M 2A Plastic Molded T
Features of 4N35 Optocoupler:Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Photo-transistorHigh Direct-Current Transfer RatioHigh-Voltage Electrical Isolation 1.5-kV, 2.5-kV, or 3.55-kV RatingHigh-Speed Switching tr = 7 s, tf = 7 s TypicalInput-to-output root-mean-square voltage (8-ms half sine wave)4N35= 2.5 kVCollector-emitter voltage=30 VEmitter-base voltage=7 VInput-diode reverse voltage=6 VTypical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers
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4N35 Optocoupler
MCT2E OptoisolatorMCT2E optoisolator consist of a gallium arsenide infrared emitting diode driving a silicon photo-transistor in a 6-pin dual in-line package.Features of MCT2E: Operating Temperature TOPR-55 to +100 DegreeCLead Solder Temperature TSOL260 for 10 sec DegreeCCollector-Emitter Voltage VCEO30 VDetector Power Dissipation @ TA= 25 DegreeC 150 mWApplications of MCT2E:Power supply regulatorsDigital logic inputsMicroprocessor inputs
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MCT2E Optoisolator
The6N137is single channel 10 MBd opto-couplers utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transistor output, providing less leakage compared to an open collector Schottky clamped transistor output. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The use of a 0.1 F bypass capacitor connected between pin 5 and 8 is recommended. Features of 6N137 High-Speed Opto-coupler:Choice of CMR performance of 15 kV/s, 5 kV/s, and 1000 V/sHigh speed 10 MBd typical+5 V CMOS compatibilityPure tin leadsGuaranteed AC and DC performance overMeets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S) requirements
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6N137 High Speed Optocou
6N139 High Speed Opto-coupleris High common mode transient immunity and very high current ratio together with 5300 VRMSinsulation are achieved by coupling and LED with an integrated high gain photo detector in an eight pin dual-in-line package. Separate pins for the photo diode and output stage enable TTL compatible saturation voltages with high speed operation. Access to the base terminal allows adjustment to the gain bandwidth. The 6N138 is ideal for TTL applications since the 300 % minimum current transfer ratio with an LED current of 1.6 mA enables operation with one unit load-in and one unit load-out with a 2.2 kO pull-up resistor. The6N139 optocoupleris best suited forlow powerlogic applications involving CMOS and low power TTL. A 400 % current transfer ratio with only 0.5 mA of LED current is guaranteed from 0 DegreeC to 70 DegreeC.
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6N139 High Speed Optocou
W78E052DDG is 8051 compatible 8-bit controller from Nuvoton with 8K programmable flash memory in 40 Pin DIP package. Wide operating voltage 2.4 - 5.5V, at 12 clock default per machine cycle it can achieve maximum 40 MHz. Peripheral includes Timer, counter, interrupt, watchdog timer and 4 ports and default configuration fully compatible with 80C52. This chip has separate dedicated 2K boot-loader memory, which makes this chip robust and very stable compare to other in this category. The chances of boot-loader erased or corrupted by user program or error are negligible. It supports ISP program downloading from PC using RX-TX lines only. Software for downloading is provided by the company free of cost.
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Nuvoton Microcontroller
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.Features:Low drain-source on-resistanceEasy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V30% reduction in RDSon*A compared to previous generationImproved figure of merit (FOM) compared to DTMOS III generationReduction in CossApplication of latest process technology: single epitaxial processWide range of on-resistances and packaging options45% reduction of Qgd (gate drain charge) at X-SeriesApplications:Switched Mode Power Supply (SMPS)LightingPower Factor Control (PFC)Industrial Applications (including UPS)
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Tk17a80w Mosfet Toshiba
LED Driver IC BP3319MBBright Power Semiconductor -Led Driver Ic:BP9911ABP9911BBP9911CBBP9911CCBP9912ABP9912BBP9912CBBP9912CBP9918ABP9918BBP9918CBBP9918CBP9916ABP9916BBP9916CBBP9916CBP9916DBP9921CBP9926CBP9926DBP9736BBP2831ABP2831AJBP2831KBP2832ABP2832AJBP2832KBP9833ABP2833ABP2833KBP2836ABP9833DBP2833DBP2836DBP2857DBP2865EBP2839ABP2333BP2335JBP2336JBP2338JBP2325AJBP2326AJBP2327AJBP2328AJBP2328DJBP2329AJBP5136HBP5131DCBP5131SCBP5131HCBP5151HCBP5152HCBP5158HBP9116BBP3122BBP3135BP3135DBP3163DBP9021ABP9022ABP3133ABP3122BP3125BP3126SBP3126BP3106BP3105BP3316DBP3315BP3316BP3319MBBP3211BP3212BP3216BP3216EBP3218BP3236CBP3238BP1360BP1361BP1808UR4205CUR3311BP5609BP5619BP3198BP2882BP2888BP2888ABP5912ABP5912BBP5910BP5911BP5901BP2838BP2838GBP2838HBP2871BP2872BP2318BP3318BP3516CBP3519BP2519BP2516FBP2513DBP3319BP3329
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LED Driver IC BP3319MB
Mosfet/Integrated Circuit (IC)SOT-23/SOT-23-3L EncapsulateSI2300 SI2301 SI2302 SI2303 SI2304SI2305 SI2306 SI2307 SI2308 SI2309SI2312 SI2315 SI2317 SI2323 2N7002SK3018 BSS138 BSS123 A03400 A03401 A03402 A03403 A03404 A03406 A03407 A03409A03410 A03413 A03415 A03420TO-92 SMD Plastic Package2N7000 1N45 1N50 1N60 1N80SOP-8 Encapsulate4401 4402 4406 4407 4410 4420 4435 4606 4614 48034812 4920 4953 9926 9435TO-252 eNCAPSULATE1N60 2N60 4N60 10N06 10P06
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Mosfet/Integrated Circui
MOSFET Transistors - IRF Series:IRF150 38A 100V N-Channel Power MOSFETIRF250 30A 200V N-Channel Power MOSFETIRF350 14A 400V N-Channel Power MOSFETIRF510 5.6A 100V N-Channel Power MOSFETIRF520 10A 100V N-Channel Power MOSFETIRF530 14A 100V N-Channel Power MOSFETIRF540 30A 100V N-Channel Power MOSFETIRF610 3.3A 200V N-Channel Power MOSFETIRF620 6A 200V N-Channel Power MOSFETIRF630 9A 200V N-Channel Power MOSFETIRF634 8.1A 250V N-Channel Power MOSFETIRF640 18A 200V N-Channel Power MOSFETIRF644 14A 250V N-Channel Power MOSFETIRF720 3.3A 400V N-Channel Power MOSFETIRF730 5.5A 400V N-Channel Power MOSFETIRF740 10A 400V N-Channel Power MOSFETIRF820 2.5A 500V N-Channel Power MOSFETIRF830 4.5A 500V N-Channel Power MOSFETIRF840 8A 500V N-Channel Power MOSFETIRF1010N 85A 55V N-Channel Power MOSFETIRF1404 202A 40V N-Channel Power MOSFETIRF1405 169A 55V N-Channel Power MOSFETIRF3205 110A 55V N-Channel Power MOSFETIRF3315 27A 150V N-Channel Power MOSFETIRF3415 43A 150V N-Channel Power MOSFETIRF3710 57A 100V N-Channel Power MOSFETIRF4905 74A 55V P-Channel Power MOSFETIRF5210 40A 100V P-Channel Power MOSFETIRF5305 31A 55V P-Channel Power MOSFETIRF9520 6.8A 100V P-Channel Power MOSFETIRF9530 12A 100V P-Channel Power MOSFETIRF9531 12A 60V P-Channel Power MOSFETIRF9532 10A 100V P-Channel Power MOSFETIRF9533 10A 60V P-Channel Power MOSFETIRF9540 23A 100V P-Channel Power MOSFETIRF9610 1.8A 200V P-Channel Power MOSFETIRF9630 6.5A 200V P-Channel Power MOSFETIRF9640 11A 200V P-Channel Power MOSFETIRF9Z34N 19A 55V P-Channel Power MOSFETIRFBG30 3.1A 1000V N-Channel Power MOSFETIRFD014 1.7A 60V N-Channel Power MOSFETIRFD024 2.5A 60V N-Channel Power MOSFETIRFD110 1A 100V N-Channel Power MOSFETIRFD120 1.3A 100V N-Channel Power MOSFETIRFD9014 1.1A 60V P-Channel Power MOSFETIRFD9024 1.6A 60V P-Channel Power MOSFETIRFD9120 1A 100V P-Channel Power MOSFETIRFP140 33A 100V N-Channel Power MOSFETIRFP150 42A 100V N-Channel Power MOSFETIRFP240 20A 200V N-Channel Power MOSFETIRFP250 33A 200V N-Channel Power MOSFETIRFP254 23A 250V N-Channel Power MOSFETIRFP260 50A 200V N-Channel Power MOSFETIRFP350 16A 400V N-Channel Power MOSFETIRFP450 14A 500V N-Channel Power MOSFETIRFP460 20A 500V N-Channel Power MOSFETIRFP9240 12A 200V P-Channel Power MOSFETIRFZ14 10A 60V N-Channel Power MOSFETIRFZ24N 17A 55V N-Channel Power MOSFETIRFZ34 26A 55V N-Channel Power MOSFETIRFZ44 49A 55V N-Channel Power MOSFETIRFZ46 50A 50V N-Channel Power MOSFETIRFZ48 50A 60V N-Channel Power MOSFETIRL520 10A 100V N-Channel Power MOSFETIRL540 36A 100V N-Channel Power MOSFET
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MOSFET Transistors - IRF
NE556 Dual Bipolar TimersNE556 provides two independent timing circuits of the NA555, NE555, SA555, or SE555 type in each package. These circuits can be operated in the astable or monostable mode with external resistor-capacitor(RC) timing control. the basic timing provided by the RC time constant can be controlled actively by moduling the bias of the control-voltage input.Features of NE556:Low turn-off timeTiming from microseconds to hoursOperates in both astable and monostable modesAdjustable duty cycleTTL compatible
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NE556 Dual Bipolar Timer

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