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Leading Wholesale Trader of HGTG11N120CND ON SEMICONDUCTOR, IXGH32N170 IXYS IGBT, IXBH16N170A IXYS, IRG4PC40UDPBF, IXGX120N60A3 IXYS and IXXH100N60B3 IXYS IGBT from Mumbai.ON SEMICONDUCTOR HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247Mfr Part#: HGTG11N120CNDMounting Method: Flange MountPackage Style: TO-247-3Packaging: TUBEStd Packaging Qty: 450The HGTG11N120CND is a N on- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Features:43 A, 1200 V, T C = 25 oC1200 V Switching SOA CapabilityTypical Fall Time. . . . . . . . . . . . . . . . .340 ns at T J = 150 o CShort Circuit RatingLow Conduction LossThermal ImpedanceSPICE Model
HGTG11N120CND ON SEMICONDUCTOR
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ABS210 Bridge Diode
ABS210 Bridge Diode
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KBL410 4A 1000 V single phase rectifier bridge
KBL410 4A 1000 V single phase rectifie
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MUR860 is a Free Wheeling Diode.MUR860diodeseries is designed for use in switching power supplies, inverters and as free wheeling diodes.Features of MUR860 DiodeUltrafast 25 and 50 Nanosecond Recovery Time175 DegreeC Operating Junction TemperatureEpoxy Meets UL 94 V0 @ 0.125 inLow Forward VoltageLow Leakage CurrentReverse Voltage to 600 VESD RatingsMachine Model = C (> 400 V)Human Body Model = 3B (> 16,000 V)SUR8 Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AECQ101Qualified and PPAP CapableThese Devices are PbFree and are RoHS Compliant Mechanical Characteristics of MUR860 DiodeCase Epoxy, MoldeWeight 1.9 Grams (Approximately)Finish All External Surfaces Corrosion Resistant and TerminalLeads are Readily SolderableLead Temperature for Soldering Purposes 260 DegreeC Max for 10 Seconds
MUR860 Diode
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MBR20100 Switch-Mode Power RectifierMBR20100 is a switch mode power rectifier diode which uses Schottky Barrier principle with a platinum barrier metal.Features of MBR2010020 A Total (10 A Per Diode Leg)GuardRing for Stress ProtectionLow Forward VoltageEpoxy Meets UL 94 V0 @ 0.125 inLow Power Loss/High EfficiencyHigh Surge CapacityLow Stored Charge Majority Carrier ConductionShipped 50 units per plastic tubeThese Devices are PbFree and are RoHS Compliant
MBR20100 Switch Mode Power Rectifier
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DB3 Bidirectional DIACFunctioning as a trigger diode with a fixed voltage reference, theDB3 DIACseries can be used in conjunction withtriacsfor simplified gate control circuits or as a starting element in fluorenscent lamp ballasts. A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment.
DB3 Bidirectional DIAC
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The SS34 is a Surface MountSchottky Barrier Rectifier. It is suitable for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications.Features of SS34Maximum repetitive peak reverse voltage, VRRM 40V;Maximum DC blocking voltage, VDC 40V;Maximum average forward rectified current at TL, IF(AV) 3.0A;Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load, IFSM 100A;Non-repetitive avalanche energy at TA= 25, IAS= 2.0A, L = 10mH ,EAS 20mJ;Voltage rate of change (rated VR), dv/dt 10 000V/s ;Low profile package;Ideal for automated placement;Guardring for over-voltage protection;Low power losses, high efficiency;Low forward voltage drop;High surge capability;Meets MSL level 1, per J-STD-020, LF maximum peak of 260 Solder dip 260, 40 s; Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
SS34 Schottky Diode
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ES2J Fast Power DiodeTheES2Jfrom Taiwan Semiconductor are surface mount super fast rectifier in Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency.Features of ES2JGlass passivated junction chip.For surface mounted application.Low profile package.Built-in strain relief.Ideal for automated placement.Easy pick and place.Superfast recovery time for high efficiency.Glass passivated chip junction.High temperature soldering 260 DegreeC/10 seconds at terminals.Plastic material.Mechanical Features of ES2JCases Moulded plastic.Terminals Pure tin plated, lead free.Polarity Indicated by cathode band.Packing 12mm tape per EIA STD RS-481.
ES2J Fast / Ultrafast Power Diode
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ES1J Superfast Rectifier DiodeTheES1JLis a surface mountsuper-fast efficient rectifier diodein Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency.Features of ES1JAutomotive grade AEC-Q101 qualifiedIdeal for automated placementMaximum repetitive reverse voltage Vrrm of 600VNon repetitive peak forward surge current IFSM of 30AApplications of ES1JPower Management;Industrial;Portable Devices;Consumer Electronics;Automotive
ES1J Superfast Rectifier Diode
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Features of IN5408 Rectifier DiodeLow forward voltageHigh current capabilityLow leakage currentHigh surge capabilityLow costMaximum Recurrent Peak Reverse Voltage 1000VMaximum DC Blocking Voltage to T =150A 0C 1000VPeak Forward Surge Current 8.3 ms single half sine-wave 150AmpMaximum Forward Voltage at 3.0A Peak 1.2V Mechanical Features IN5408 Rectifier DiodeCaseMold plastic use UL 94V-0 recognized flame retardant epoxyTerminals Axial leads, solderable per MIL-STD-202, method 208PolarityColor band denotes cathodeMounting Position Any.
IN5408 Plastic Silicon Rectifier Diode
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IN5822 DiodeIN5822 Diode is low drop power Schottky Diode. It also Schottky Rectifier. For use in low voltage, high frequency inverter free wheeling, and polarity protection applications.Features of IN5822 DiodeLow Switching NoiseLow Forward Voltage DropHigh Current CapabilityHigh Surge Current Capability3.0 ampere operation at TA = 95 DegreeC with no thermal runaway.Non-repetitive Peak Forward Surge Current is 80Amp
IN5822 Schottky Diode
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Features of IN5819 Schottky DiodeGuard Ring Die Construction for Transient ProtectionLow Power Loss, High EfficiencyHigh Surge CapabilityHigh Current Capability and Low Forward Voltage DropFor Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application.Typical Total Capacitance CT 110 pFTypical Thermal Resistance Junction to Lead RJL 15 oC/WTypical Thermal Resistance Junction to Ambient RJA 50 oC
1N5819 schottky Diode
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JWCO Electrolytic Capacitors 10uf/450vMOSFET Transistors - IRF SeriesMUR860 DiodeLDR Light Dependent Resistor Sensor (LDR)SMD LED SELLERSMD LEDSMD LED SUPPLIERSMD LED SUP0805 LEDSMD LED BUYER1206 LEDSMD LED TRADER2835 LEDindustrial electronics componentscomponentselectronics componentsYageo Chip CapacitorsKEMET Tantalum CapacitorsUniOhm Chip ResistorTLP250 Optocoupler4N35 OptocouplerKBPC3510 Bridge RectifierBridge RectifierL293D Motor Driver ICEPCOS Metal Oxide VaristorBYV27-200 Ultra-Fast Avalanche DiodeUltra-Fast Avalanche DiodeMosfet/Integrated Circuit (IC)DB3 Bidirectional DIACzener diode supplizener diode supplierzener diode wholesalerzeener diodezener diode traderDiotec DiodeFast Recovery Rectifiers DiodesWALSIN Multilayer Ceramic Capacitors MLCC1N4148 Zener DiodeZener DiodePC817 OptocouplerIRG4PC40UDPBFLNK364IXBH16N170A IXYSMB10F Bridge Rectifier2P4M 2A Plastic Molded ThyristorSMD PARTSSMD DIODESMD COMPONENTSSOT123 PAKAGE DIODESOD123 PACKAGEIN4148 SOD123Trimpot Trimmer potentiometer3296W TRIMMER POTENTIONMETERTRIMPOT3006P POTENTIOMETERPRESETHORIZONTAL PRESET16MM TONELCON PRESETELCONPERSET IN MUMBAIPRESET BUYERRMO65VERTICAL PRESETRMPPRESET TRADERELCON TONRMO65-10KP10KJWCO Electrolytic Capacitors 100uf/160vJWCO Electrolytic Capacitors 22uf/63v8way switchbox type switchDip switch10way switch4wayYageo Multilayer Ceramic Capacitors MLCCJWCO Electrolytic Capacitors 220uf/100vIRS2110 ICMJE13005 NPN Power TransistorKBL410 4A 1000 V single phase rectifier bridgeL7812 Voltage RegulatorMJE13009 NPN Power TransistorNuvoton MicrocontrollerES2J Fast / Ultrafast Power DiodeC945 NPN TransistorL7805 Voltage Regulators4.7uF 400V Keltron CapacitorMetallized Polyester Film CapacitorMetal Oxide Varistor (HEL)INDUCTORMJE2955 Power TransistorSchottky Rectifiers DiodesZener Diodes SOT-23Metallized Polypropylene Film Weidy Capacitor22pF Ceramic CapacitorLittelfuse Metal Oxide Varistors (Mov)BP3309 LED Driver ICHYDZ Piezo BuzzerRHRG75120 Hyperfast DiodeBR1010 Bridge RectifierRESETTABLE & NON RESETTABLE FUSEPTC Resettable FuseMJE3055 Power Transistor12V RELAY12V NAVINEXNAVINEX RELAY SUPPLIERSNAVINEX RELAY IMPORTERNAVINEX RELAYSugar Cube Relays manufacturers, suppliers & expor12V T TYPE RELAYNAV24V RELAY3.6JP BUYER3.6JP TRADER3.6JP BATTERY WHOLSELLER3.6JP SUPPLIAR3.6JP3.6JP BATTERYCRYSTAL WHOLESELERCRYSTALCRYSTAL HALF SIZE32.768CRYSTAL FULL SIZEBZX79 Series Zener DiodeLM393 Comparator ICSwitching DiodeIN5408 Plastic Silicon Rectifier DiodeNPN Transistor 2N2222NPN TransistorTk17a80w Mosfet Toshiba6N137 High Speed OptocouplerTVS DiodeIXGH32N170 IXYS IGBTMB10SDIODEMB10S IN MUMBAIMB10S DIODE1000 /35V Keltron Electrolytic CapacitorsKeltron Electrolytic Capacitors1 Watt Zener Diodes (DO-41)Zener Diodes6A4 Silicon Rectifier DiodeSG3525 Pulse Width ModulatorMetal Oxide Varistor Littelfuse1mH InductorPTC Thermistor2N2222 Amplifier Transistor(TO-92)EEPROM ICUF5408 Ultrafast DiodeUltrafast DiodeJWCO Electrolytic CapacitorsSamwha Electrolytic CapacitorABS210 Bridge DiodeNTC ThermistorIXXH100N60B3 IXYS IGBTMetal Oxide Varistor Epcos6N139 High Speed Optocoupler74LS08 Quad 2-Input & GateICIN5819 schottky Diodeschottky Diodezener diode wholesalerszener diode supplierszener diode manufacturerszener diode tradersregulator transistor traderregulator transistor manufacturersRegulator Transistorregulator transistor suppliersZinc Oxide Varistor(ZOV)HEL MOVmetal oxide varistorsHEL MOV WHOLESELER104 MLCMULITILAYER ALL VALUEMultilayer5MM LED10MM LEDLED IMPOTER3MM LEDLED SELLER IN MUMBAI5MM RED LEDLEDLED RETAILERSMD Capacitors6WAY DIP SWITCHDIP SWITCH IMPOTER2WAY DIP SWITCH10WAY DIP SWITCHSWITCH IN MUMBAIDIP SWITCH4WAY DIP SWITCHDIP SWITCH RETAILER5 Watt Zener Diode (1N53 Series)JWCO Electrolytic Capacitors 100uf/100v100000pF (104pF) Ceramic CapacitorCeramic CapacitorT491A106K010AT KEMET Tantalum CapacitorsJWCO Electrolytic Capacitors 10uf/63v4N25 OptocouplerJWCO Electrolytic Capacitors 4.7uf/450vDB107 Bridge RectifierJWCO Electrolytic Capacitors 10uF/250VMCT2E OptoisolatorTNY268PN Power Integrations6.8uH InductorW06 Single Phase Silicon Bridge RectifierSingle Phase Silicon Bridge Rectifier6N136 OptocouplerZinc Oxide Varistor ThinkingGeneral Purpose Rectifiers DiodeIN5822 Schottky DiodeRHRG30120 Hyper-fast DiodeLED Driver IC BP3319MBES1J Superfast Rectifier DiodeNPN Silicon TransistorsTBOR Electrolytic CapacitorAluminum Electrolytic CapacitorsTIP122 Darlington TransistorIXGX120N60A3 IXYSFR107 Fast Recovery Axial Rectifiers DiodeHGTG11N120CND ON SEMICONDUCTORMB10s Bridge Rectifier56uH InductorL7806 DC Voltage RegulatorIC BASEIC BASE SELLER8PIN IC BASE40PIN IC BASEIC BASE IN MUMBAIIC SOCKETNTC thermistorNTC IN MUMBAIRoyalohm Chip ResistorElectrolytic CapacitorJWCO Electrolytic Capacitors 470uf/50vM7 DiodeDIODE RECTIFIERMJE13003D NPN Power TransistorSS34 Schottky DiodeMBR20100 Switch Mode Power RectifierNE556 Dual Bipolar TimersSMD IN MUMBAIZEENER DIODESMD TRANSISTERSHK RELAYRELAY IN MUMBAIRELAY WHOLESALERELAY IMPORTERRELAYSUGER CUBE RELAYRELAY SELLER5 Volt PCB Mounting BuzzerHX710B DIP / HX710B SMD Integrated CircuitsIntegrated CircuitsPower Integrations LNK304PNUltra Fast Recovery Rectifiers DiodesKBPC5010 Bridge RectifierWeidy Capacitor
Leading Wholesale Trader of HGTG11N120CND ON SEMICONDUCTOR, IXGH32N170 IXYS IGBT, IXBH16N170A IXYS, IRG4PC40UDPBF, IXGX120N60A3 IXYS and IXXH100N60B3 IXYS IGBT from Mumbai.ON SEMICONDUCTOR HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247Mfr Part#: HGTG11N120CNDMounting Method: Flange MountPackage Style: TO-247-3Packaging: TUBEStd Packaging Qty: 450The HGTG11N120CND is a N on- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Features:43 A, 1200 V, T C = 25 oC1200 V Switching SOA CapabilityTypical Fall Time. . . . . . . . . . . . . . . . .340 ns at T J = 150 o CShort Circuit RatingLow Conduction LossThermal ImpedanceSPICE Model
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HGTG11N120CND ON SEMICON
ABS210 Bridge Diode
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ABS210 Bridge Diode
KBL410 4A 1000 V single phase rectifier bridge
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KBL410 4A 1000 V single
MUR860 is a Free Wheeling Diode.MUR860diodeseries is designed for use in switching power supplies, inverters and as free wheeling diodes.Features of MUR860 DiodeUltrafast 25 and 50 Nanosecond Recovery Time175 DegreeC Operating Junction TemperatureEpoxy Meets UL 94 V0 @ 0.125 inLow Forward VoltageLow Leakage CurrentReverse Voltage to 600 VESD RatingsMachine Model = C (> 400 V)Human Body Model = 3B (> 16,000 V)SUR8 Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AECQ101Qualified and PPAP CapableThese Devices are PbFree and are RoHS Compliant Mechanical Characteristics of MUR860 DiodeCase Epoxy, MoldeWeight 1.9 Grams (Approximately)Finish All External Surfaces Corrosion Resistant and TerminalLeads are Readily SolderableLead Temperature for Soldering Purposes 260 DegreeC Max for 10 Seconds
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MUR860 Diode
MBR20100 Switch-Mode Power RectifierMBR20100 is a switch mode power rectifier diode which uses Schottky Barrier principle with a platinum barrier metal.Features of MBR2010020 A Total (10 A Per Diode Leg)GuardRing for Stress ProtectionLow Forward VoltageEpoxy Meets UL 94 V0 @ 0.125 inLow Power Loss/High EfficiencyHigh Surge CapacityLow Stored Charge Majority Carrier ConductionShipped 50 units per plastic tubeThese Devices are PbFree and are RoHS Compliant
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MBR20100 Switch Mode Pow
DB3 Bidirectional DIACFunctioning as a trigger diode with a fixed voltage reference, theDB3 DIACseries can be used in conjunction withtriacsfor simplified gate control circuits or as a starting element in fluorenscent lamp ballasts. A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment.
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DB3 Bidirectional DIAC
The SS34 is a Surface MountSchottky Barrier Rectifier. It is suitable for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications.Features of SS34Maximum repetitive peak reverse voltage, VRRM 40V;Maximum DC blocking voltage, VDC 40V;Maximum average forward rectified current at TL, IF(AV) 3.0A;Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load, IFSM 100A;Non-repetitive avalanche energy at TA= 25, IAS= 2.0A, L = 10mH ,EAS 20mJ;Voltage rate of change (rated VR), dv/dt 10 000V/s ;Low profile package;Ideal for automated placement;Guardring for over-voltage protection;Low power losses, high efficiency;Low forward voltage drop;High surge capability;Meets MSL level 1, per J-STD-020, LF maximum peak of 260 Solder dip 260, 40 s; Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
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SS34 Schottky Diode
ES2J Fast Power DiodeTheES2Jfrom Taiwan Semiconductor are surface mount super fast rectifier in Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency.Features of ES2JGlass passivated junction chip.For surface mounted application.Low profile package.Built-in strain relief.Ideal for automated placement.Easy pick and place.Superfast recovery time for high efficiency.Glass passivated chip junction.High temperature soldering 260 DegreeC/10 seconds at terminals.Plastic material.Mechanical Features of ES2JCases Moulded plastic.Terminals Pure tin plated, lead free.Polarity Indicated by cathode band.Packing 12mm tape per EIA STD RS-481.
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ES2J Fast / Ultrafast Po
ES1J Superfast Rectifier DiodeTheES1JLis a surface mountsuper-fast efficient rectifier diodein Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency.Features of ES1JAutomotive grade AEC-Q101 qualifiedIdeal for automated placementMaximum repetitive reverse voltage Vrrm of 600VNon repetitive peak forward surge current IFSM of 30AApplications of ES1JPower Management;Industrial;Portable Devices;Consumer Electronics;Automotive
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ES1J Superfast Rectifier
Features of IN5408 Rectifier DiodeLow forward voltageHigh current capabilityLow leakage currentHigh surge capabilityLow costMaximum Recurrent Peak Reverse Voltage 1000VMaximum DC Blocking Voltage to T =150A 0C 1000VPeak Forward Surge Current 8.3 ms single half sine-wave 150AmpMaximum Forward Voltage at 3.0A Peak 1.2V Mechanical Features IN5408 Rectifier DiodeCaseMold plastic use UL 94V-0 recognized flame retardant epoxyTerminals Axial leads, solderable per MIL-STD-202, method 208PolarityColor band denotes cathodeMounting Position Any.
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IN5408 Plastic Silicon R
IN5822 DiodeIN5822 Diode is low drop power Schottky Diode. It also Schottky Rectifier. For use in low voltage, high frequency inverter free wheeling, and polarity protection applications.Features of IN5822 DiodeLow Switching NoiseLow Forward Voltage DropHigh Current CapabilityHigh Surge Current Capability3.0 ampere operation at TA = 95 DegreeC with no thermal runaway.Non-repetitive Peak Forward Surge Current is 80Amp
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IN5822 Schottky Diode
Features of IN5819 Schottky DiodeGuard Ring Die Construction for Transient ProtectionLow Power Loss, High EfficiencyHigh Surge CapabilityHigh Current Capability and Low Forward Voltage DropFor Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application.Typical Total Capacitance CT 110 pFTypical Thermal Resistance Junction to Lead RJL 15 oC/WTypical Thermal Resistance Junction to Ambient RJA 50 oC
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1N5819 schottky Diode

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