Description

Product details

Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators. Features: Low drain-source on-resistance Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7V 30% reduction in RDSon*A compared to previous generation Improved figure of merit (FOM) compared to DTMOS III generation Reduction in Coss Application of latest process technology: single epitaxial process Wide range of on-resistances and packaging options 45% reduction of Qgd (gate drain charge) at X-Series Applications: Switched Mode Power Supply (SMPS) Lighting Power Factor Control (PFC) Industrial Applications (including UPS)