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Mje13003D Npn Power Transistormje13003D Is High Voltage Fast-Switching Npn Power Transistor. The Utcmje13003Dis A Npn Power Transistor. It Is Intended To Be Used In Applications Requiring Medium Voltage Capability And High Switching Speeds. Features: Fast-Switching And High Voltage Capability Dynamic Parameters With Low Spread High Reliability Integrated Anti parallel Collector-Emitter Diode Collector- Emitter Voltage (VBE=0) VCES=700 V Collector-Emitter Voltage (IB=0) VCEO=400 V Emitter-Base Voltage (IC=0, IB=0.75A, tP<10S) VEBO=9 V Collector Peak Current (tP<5ms) ICM=3 A Emitter-Base Breakdown Voltage Bveboie =10mA, IC=0 is 9V(min), 18 V(max) Base Peak Current (tP <5ms) IBM=1.5 A Collector-Emitter Sustaining Voltage VCEO(SUS)IC=10mA, IB=0=400